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DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D302
1PS74SB43 Schottky barrier diode
Product specification 1999 Dec 10
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES * Ultra fast switching speed * Low forward voltage * Fast recovery time * Guard ring protected * Small plastic SMD package * Capability of absorbing very high surge current. APPLICATIONS * Rectification * Circuit protection * Polarity protection * Switched-mode power supplies.
1 2 3
MAM421
1PS74SB43
PINNING PIN 1 2 3 4 5 6 anode cathode anode anode cathode anode DESCRIPTION
handbook, halfpage 6
5
4
2, 5
1, 3, 4, 6
DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package.
Marking code: P2.
Top view
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM IRSM Tstg Tj Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method; note 1 tp = 100 s CONDITIONS - - - - -65 - MIN. MAX. 40 1 27 0.5 +150 125 UNIT V A A A C C
1999 Dec 10
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2; note 1 IF = 0.1 A IF = 1 A IR Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-74 (SOT457) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 4 V; f = 1 MHz; see Fig.4 280 460 15 60 65
1PS74SB43
TYP.
MAX. 330 500 40 300 80
UNIT mV mV A A pF
VALUE 200
UNIT K/W
1999 Dec 10
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MGL923
1PS74SB43
10 4 handbook, halfpage IR (A) 10
3
MLC389
(1) (2) (3)
10 2
(1) (2) (3) (4)
(4)
10 10
1 0 (1) Tamb = 125 C. (2) Tamb = 100 C. (3) Tamb = 75 C. (4) Tamb = 25 C. 0.2 0.4 VF (V) 0.6
1 0 (1) Tamb = 125 C. (2) Tamb = 100 C. (3) Tamb = 75 C. (4) Tamb = 25 C. 10 20 30 V R (V) 40
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
10 3 handbook, halfpage
MLC390
Cd (pF)
10 2
10 0 8 16 24 32 V (V) 40 R
f = 1 MHz; Tamb = 25 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
1999 Dec 10
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
1PS74SB43
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Dec 10
5
Philips Semiconductors
Product specification
Schottky barrier diode
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
1PS74SB43
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Dec 10
6
Philips Semiconductors
Product specification
Schottky barrier diode
NOTES
1PS74SB43
1999 Dec 10
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/01/pp8
Date of release: 1999
Dec 10
Document order number:
9397 750 06626

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